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InAs/GaSb/AlSb resonant tunneling spin device concepts

InAs/GaSb/AlSb resonant tunneling spin device concepts

Ting, D. Z. Y.; Cartoixa, X.
URI: http://hdl.handle.net/2014/7591
Date: 2003-06-16
Citation: 11th International Conference on Narrow Gap Semiconductors
Buffalo, NY, USA

Abstract:

We discuss device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic 6.1 A semiconductor resonant tunneling structures.

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