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Magnetic field sensing with 4H SiC diodes: nitrogen vs phosphorous implantation

Magnetic field sensing with 4H SiC diodes: nitrogen vs phosphorous implantation

Cochane, Corey J.; Kraus, Hannes; Neudeck, Philip G.; Spry, David; Waskiewicz, Ryan J.; Ashton, James; Lenahan, Patrick M.
URI: http://hdl.handle.net/2014/48551
Date: 2017-09-17
Publisher: Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2017
Citation: International Conference on Silicon Carbide and Related Materials, Washington, DC, September 17-22, 2017

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