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Magnetic field sensing with 4H SiC diodes: nitrogen vs phosphorous implantation
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Magnetic field sensing with 4H SiC diodes: nitrogen vs phosphorous implantation
Cochane, Corey J.
;
Kraus, Hannes
;
Neudeck, Philip G.
;
Spry, David
;
Waskiewicz, Ryan J.
;
Ashton, James
;
Lenahan, Patrick M.
URI:
http://hdl.handle.net/2014/48551
Date:
2017-09-17
Publisher:
Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2017
Citation:
International Conference on Silicon Carbide and Related Materials, Washington, DC, September 17-22, 2017
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JPL TRS 1992+
JPL TRS 1992+
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