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Band engineering, growth and characteristics of type-II InAs/GaSb superlattice-based detectors

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dc.contributor.author Khoshakhlagh, A.
dc.contributor.author Ting, D.Z.
dc.contributor.author Soibel, A.
dc.contributor.author Hill, C.J.
dc.contributor.author Hoglund, L.
dc.contributor.author Nguyen, J.
dc.contributor.author Keo, S.A.
dc.contributor.author Liao, A.
dc.contributor.author Gunapala, S.D.
dc.date.accessioned 2019-05-20T21:00:39Z
dc.date.available 2019-05-20T21:00:39Z
dc.date.issued 2016-10-02
dc.identifier.citation IEEE Photonics Conference, Waikoloa, Hawaii, October 2-6, 2016 en_US
dc.identifier.clearanceno 16-2194
dc.identifier.uri http://hdl.handle.net/2014/46128
dc.description.abstract We report on band engineering, growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR imaging technologies and offer significant advantages over the conventional II-VI material based FPAs. The innovative design of CBIRDS, barrier and band offset engineering , low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2016 en_US
dc.title Band engineering, growth and characteristics of type-II InAs/GaSb superlattice-based detectors en_US
dc.type Preprint en_US


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