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Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for single-event gate rupture and single-event burnout

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for single-event gate rupture and single-event burnout

Scheick, Leif
URI: http://hdl.handle.net/2014/44638
Date: 2014-01-01
Keywords: International Rectifier; total-dose hardening; Single-event effect; SEE; metal–oxide–semiconductor field-effect transistor; MOSFET; Semicoa
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2014

Abstract:

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture’s data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data.

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