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High throughput, high yield fabrication of high quantum efficiency backilluminated photon counting, Far UV, UV, and visible detector arrays

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dc.contributor.author Nikzad, Shouleh
dc.contributor.author Hoenk, M. E.
dc.contributor.author Carver, A. G.
dc.contributor.author Jones, T. J.
dc.contributor.author Greer, F.
dc.contributor.author Hamden, E.
dc.contributor.author Goodsall, T.
dc.date.accessioned 2013-12-17T20:41:25Z
dc.date.available 2013-12-17T20:41:25Z
dc.date.issued 2013-06-12
dc.identifier.citation International Image Sensors Workshop (IISW), Snowbird, Utah, June 12-16, 2013. en_US
dc.identifier.clearanceno 13-1909
dc.identifier.uri http://hdl.handle.net/2014/44094
dc.description.abstract In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD). en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013 en_US
dc.subject spectroscopy en_US
dc.subject molecular beam epitaxy (MBE) en_US
dc.title High throughput, high yield fabrication of high quantum efficiency backilluminated photon counting, Far UV, UV, and visible detector arrays en_US
dc.type Preprint en_US


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