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A theoretical analysis of steady-state photocurrents in simple silicon diodes.

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dc.contributor.author Edmonds, Larry
dc.date.accessioned 2009-04-15T21:21:39Z
dc.date.available 2009-04-15T21:21:39Z
dc.date.issued 1995-03
dc.identifier.uri http://hdl.handle.net/2014/41261
dc.description.abstract A theoretical analysis solves for the steady-state photocurrents produced by a given photogeneration rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called "substrate" below) between a p-n junction depletion region (DR) and an ohmic contact (electrode). Special attention is given to conditions that produce "funneling" (a term used by the single-event-effects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage plus built-in potential normally across the DR is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. Chapter 6 discusses some similarities between the steady-state and transient problems... en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 1995 en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 95-10 en_US
dc.subject silicon diodes en_US
dc.subject photocurrents en_US
dc.subject funneling en_US
dc.subject Crystal structures. en_US
dc.subject Ambipolar diffusions en_US
dc.subject electric currents en_US
dc.title A theoretical analysis of steady-state photocurrents in simple silicon diodes. en_US
dc.type Technical Report en_US


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