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Product reliability trends, derating considerations and failure mechanisms with scaled CMOS

Product reliability trends, derating considerations and failure mechanisms with scaled CMOS

White, Mark; Vu, Duc; Nguyen, Duc; Ruiz, Ron; Chen, Yuan; Bernstein, Joseph B.
URI: http://hdl.handle.net/2014/41122
Date: 2006-10-16
Keywords: accelerated stress testing; advanced technology; CMOS integrated circuits; failure analysis
Publisher: IEEE
Citation: 2006 International Integrated Reliability Workshop Final Report, Oct. 16, 2006,- Sept. 19, 2006,p. 156 - 159; doi:10.1109/IRWS.2006.305234

Abstract:

As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s)

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