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Self-assembled InAsSb quantum dots on (001) InP substrates

Show simple item record Qiu, Yueming Uhl, David 2008-08-08T22:12:24Z 2008-08-08T22:12:24Z 2004-03-01
dc.identifier.citation Applied Physics Letters, Volume 84, Number 9, 1 March 2004 DOI: 10.1063/1.1655690 en_US
dc.identifier.clearanceno 03-2674
dc.description.abstract Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 53109/cm², however, InAsSb QDs of density as high as 4 X10¹º/cm² could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In0.53Ga0.47As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2µm. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher American Institute of Physics en_US
dc.subject Quantum - dot (QD) en_US
dc.subject metalorganic vapor phase epitaxy en_US
dc.subject arsine en_US
dc.title Self-assembled InAsSb quantum dots on (001) InP substrates en_US
dc.type Article en_US

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