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Delta-doped high purity silicon UV-NIR CCDs with high QE and low dark current

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dc.contributor.author Hoenk, Michael
dc.contributor.author Blacksberg, Jordana
dc.contributor.author Nikzad, Shouleh
dc.contributor.author Elliott, S. Tom
dc.contributor.author Holland, Steve
dc.contributor.author Bebek, Chris
dc.date.accessioned 2007-06-29T16:14:13Z
dc.date.available 2007-06-29T16:14:13Z
dc.date.issued 2006-08-13
dc.identifier.citation Optics and Photonics Infrared and Photoelectronic Imagers and Detector Devices II, San Diego, California, August 13-17, 2006 en
dc.identifier.clearanceno 06-2450
dc.identifier.uri http://hdl.handle.net/2014/40290
dc.description.sponsorship NASA/JPL en
dc.format.extent 7577490 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. en
dc.subject delta doping en
dc.subject p channels en
dc.subject Super Nova Acceleration Probe (SNAP) en
dc.subject Orion en
dc.title Delta-doped high purity silicon UV-NIR CCDs with high QE and low dark current en
dc.type Presentation en


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