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Results of single-event effects measurements conducted by the Jet Propulsion Laboratory

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dc.contributor.author Irom, Farokh
dc.contributor.author Miyahira, Tetsuo F.
dc.date.accessioned 2006-08-24T20:02:03Z
dc.date.available 2006-08-24T20:02:03Z
dc.date.issued 2006-07-17
dc.identifier.citation International Nuclear and Space Radiation Effects Conference, Jacksonville, Florida, July 17, 2006. en
dc.identifier.clearanceno 06-1868
dc.identifier.uri http://hdl.handle.net/2014/39717
dc.description.abstract The studies discussed in this paper were undertaken to establish the sensitivity of the electronic devices to SEL and SEU. SEE measurements were performed on 5 different types of CMOS devices including ADC’s, supervisory circuits, FIFO memory, and a Viterbi decoder. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 254407 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. en
dc.subject Cyclotron en
dc.subject heavy ions en
dc.subject single-event effect (SEE) en
dc.subject Latchup en
dc.title Results of single-event effects measurements conducted by the Jet Propulsion Laboratory en
dc.type Preprint en


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