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Beyond G-band : a 235 GHz InP MMIC amplifier

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dc.contributor.author Dawson, Douglas
dc.contributor.author Samoska, Lorene
dc.contributor.author Fung, A. K.
dc.contributor.author Lee, Karen
dc.contributor.author Lai, Richard
dc.contributor.author Grundbacher, Ronald
dc.contributor.author Liu, Po-Hsin
dc.contributor.author Raja, Rohit
dc.date.accessioned 2006-05-04T18:05:57Z
dc.date.available 2006-05-04T18:05:57Z
dc.date.issued 2005-12
dc.identifier.citation IEEE Microwave and Wireless Components Letters, Vol. 15, NO 12, December 2005, doi 10.1109/LMWC.2005.859984 en
dc.identifier.clearanceno 05-1170
dc.identifier.uri http://hdl.handle.net/2014/39223
dc.description.abstract We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology’s (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220–325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz en
dc.description.sponsorship NASA/JPL en
dc.format.extent 434018 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher IEEE en
dc.subject G - band en
dc.subject high electron mobility transistors (HEMTs) en
dc.subject indium phosphide en
dc.subject millimeter wave field-effect transistor (FET) amplifiers en
dc.subject monolithic millimeter-wave integrated circuits (MMICs) en
dc.subject WR3 waveguide en
dc.title Beyond G-band : a 235 GHz InP MMIC amplifier en
dc.type Article en


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