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Proton damage in LEDs with wavelengths above the silicon wavelength cutoff

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dc.contributor.author Becker, Heidi N.
dc.contributor.author Johnston, Allan H.
dc.date.accessioned 2006-02-08T18:55:46Z
dc.date.available 2006-02-08T18:55:46Z
dc.date.issued 2004-07-19
dc.identifier.citation IEEE Nuclear & Space Radiation Effects Conference, Atlanta, GA, July 19, 2004. en
dc.identifier.clearanceno 04-2107
dc.identifier.uri http://hdl.handle.net/2014/38444
dc.description.abstract This paper has examined the effects of proton damage on two types of LEDs in the wavelength region above the silicon bandgap limit. Unlike AlGaAs LEDs, the optical power linearity in both types of devices changes significantly after irradiation. This may be caused by the lower heterojunction barriers associated with these materials. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 713554 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004 en
dc.subject LED en
dc.subject protons en
dc.subject AlGaAs en
dc.subject GaAs en
dc.subject long wavelength en
dc.title Proton damage in LEDs with wavelengths above the silicon wavelength cutoff en
dc.type Preprint en


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