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Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz

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dc.contributor.author Fung, A. K.
dc.contributor.author Samoska, L.
dc.contributor.author Velebir, J.
dc.contributor.author Siegel, P.
dc.contributor.author Rodwell, M.
dc.contributor.author Paidi, V.
dc.contributor.author Griffith, Z.
dc.contributor.author Malik, R.
dc.date.accessioned 2006-01-20T22:16:38Z
dc.date.available 2006-01-20T22:16:38Z
dc.date.issued 2005-10
dc.identifier.citation State-of-the-Art Programs on Compound Semiconductors XLIII, Los Angeles, CA, Oct. 16-21, 2005 en
dc.identifier.clearanceno 05-1862
dc.identifier.uri http://hdl.handle.net/2014/38342
dc.description.abstract We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz. en
dc.description.sponsorship NASA en
dc.format.extent 195200 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. en
dc.subject transistors en
dc.subject submillimeter en
dc.subject THz en
dc.subject HBT en
dc.title Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz en
dc.type Preprint en


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