Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz

Fung, A. K.; Samoska, L.; Velebir, J.; Siegel, P.; Rodwell, M.; Paidi, V.; Griffith, Z.; Malik, R.

dc.contributor.author	Fung, A. K.
dc.contributor.author	Samoska, L.
dc.contributor.author	Velebir, J.
dc.contributor.author	Siegel, P.
dc.contributor.author	Rodwell, M.
dc.contributor.author	Paidi, V.
dc.contributor.author	Griffith, Z.
dc.contributor.author	Malik, R.
dc.date.accessioned	2006-01-20T22:16:38Z
dc.date.available	2006-01-20T22:16:38Z
dc.date.issued	2005-10
dc.identifier.citation	State-of-the-Art Programs on Compound Semiconductors XLIII, Los Angeles, CA, Oct. 16-21, 2005	en
dc.identifier.clearanceno	05-1862
dc.identifier.uri	http://hdl.handle.net/2014/38342
dc.description.abstract	We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.	en
dc.description.sponsorship	NASA	en
dc.format.extent	195200 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US	en
dc.publisher	Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.	en
dc.subject	transistors	en
dc.subject	submillimeter	en
dc.subject	THz	en
dc.subject	HBT	en
dc.title	Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz	en
dc.type	Preprint	en