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Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology

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dc.contributor.author Paidi, V.
dc.contributor.author Griffith, Z.
dc.contributor.author Wei, Y.
dc.contributor.author Dahlstrom, M.
dc.contributor.author Parthasarathy, N.
dc.contributor.author Urteaga, M.
dc.contributor.author Rodwell, M. J. W.
dc.date.accessioned 2005-11-07T23:33:06Z
dc.date.available 2005-11-07T23:33:06Z
dc.date.issued 2004-06
dc.identifier.citation IEEE Radio Frequency Integrated Circuit Symposium 2004, Ft. Worth, TX, June 6, 2004 en
dc.identifier.clearanceno 04-0664
dc.identifier.uri http://hdl.handle.net/2014/37883
dc.description.abstract We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. en
dc.description.sponsorship NASA en
dc.format.extent 381542 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004. en
dc.subject MMIC amplifiers en
dc.subject millimeter-wave amplifier en
dc.subject InP heterojunction bipolar transistor en
dc.title Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology en
dc.type Preprint en


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