Passivation of MBE grown InGaSb/InAs superlattice photodiodes

Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

Passivation of MBE grown InGaSb/InAs superlattice photodiodes

Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

URI: http://hdl.handle.net/2014/37821

Date: 2005-03

Keywords: diode lasers; mid-infrared; semiconductor superlattices; molecular beam

Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.

Citation: SPIE Defense and Security Symposium, March 28 - April 1, 2005

Abstract:

We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

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