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Properties of Semiconducting Ru_2Ge_3

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dc.contributor.author Fleurial, Jean-Pierre en_US
dc.contributor.author Borshchevsky, Alex en_US
dc.date.accessioned 2004-10-06T15:41:39Z
dc.date.available 2004-10-06T15:41:39Z
dc.date.issued 1993-11 en_US
dc.identifier.citation International Thermoelectric Society, Thermoelectrics en_US
dc.identifier.citation Yokohama, Japan en_US
dc.identifier.clearanceno 93-1845 en_US
dc.identifier.uri http://hdl.handle.net/2014/36310
dc.description.abstract Transport properties of large single crystalline samples of Ru_2Ge_3 grown from the melt have been investigated in a 25-1000 C temperature range. A diffusionless transition between 500 and 550C from a high temperature tetragonal structure to a low temperature orthorhombic structure was clearly observed. Results showed that both the low temperature orthorhombic and the high temperature structural tetragonal phase are semiconductors. Some anisotropy of the transport coefficients was determined by measuring the samples in orientations parallel and perpendicular to the preferential direction of crystal growth. Large Seebeck coefficient (up to 400 microVK^(-1)) and low thermal conductivity (as low as 20x10^(-3) Wcm^(-1)K^(-1)) were achieved for the low temperature orthorhombic phase. Difficulties in preparing heavily doped samples and low Hall mobilities have limited values for the maximum figure of merit to 0.5 x 10^(-3) K^(-1) at 500 C. en_US
dc.format.extent 1087697 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.title Properties of Semiconducting Ru_2Ge_3 en_US


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