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Ballistic Electron Emission Microscopy of Metal/Group IV Interfaces

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dc.contributor.author Hecht, M. H. en_US
dc.contributor.author Kaiser, W. J. en_US
dc.contributor.author Bell, L. D. en_US
dc.contributor.author Fathauer, R. en_US
dc.contributor.author Manion, S. J. en_US
dc.date.accessioned 2004-10-06T05:09:30Z
dc.date.available 2004-10-06T05:09:30Z
dc.date.issued 1993-11 en_US
dc.identifier.citation Materials Research Society en_US
dc.identifier.citation Boston, MA en_US
dc.identifier.clearanceno 93-1613 en_US
dc.identifier.uri http://hdl.handle.net/2014/35884
dc.description.abstract Ballistic electron emission microscopy and spectroscopy, together with related techniques, have been applied with great success to the study of buried interfaces. These probes, known collectively as BEEM, have yielded important information on interface transport, interface band structure, and carrier scattering, with lateral spatial resolution on the nanometer scale. Recent applications of the technique to polycrystalline metal/semiconductor interfaces have demonstrated an ability to spatially map both conduction band and valence band semiconductor structure. BEEM studies of epitaxial silicide/silicon interfaces have been particularly fruitful, as the rich silicide band structure results in complex and often surprising transport behavior... en_US
dc.format.extent 95948 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.title Ballistic Electron Emission Microscopy of Metal/Group IV Interfaces en_US


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