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On-Chip p-MOSFET Dosimetry

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dc.contributor.author Buehler, M. G. en_US
dc.contributor.author Blaes, B. R. en_US
dc.contributor.author Soli, G. A. en_US
dc.contributor.author Tardio, G. R. en_US
dc.date.accessioned 2004-10-06T04:02:23Z
dc.date.available 2004-10-06T04:02:23Z
dc.date.issued 1993-07 en_US
dc.identifier.citation Snowbird, Utah, USA en_US
dc.identifier.clearanceno 93-1288 en_US
dc.identifier.uri http://hdl.handle.net/2014/35570
dc.description.abstract On-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring the threshold voltage shifts due to radiation induced oxide and interface charge. en_US
dc.format.extent 361142 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other FET's temperature sensitivity on-chip FET dosimeters radiation dose CMOS IC en_US
dc.title On-Chip p-MOSFET Dosimetry en_US


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