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(abstract) Epitaxial High-T<SUB>c</SUB> SNS Weak Links on Silicon-on-Sapphire Substrates

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dc.contributor.author Hunt, B.D. en_US
dc.contributor.author Barner, J.B. en_US
dc.contributor.author Foote, M.C. en_US
dc.contributor.author Vasquez, R.P. en_US
dc.contributor.author Schoelkopf, R.J. en_US
dc.contributor.author Phillips, T.G. en_US
dc.contributor.author Zmuidzinas, J. en_US
dc.date.accessioned 2004-10-06T03:52:23Z
dc.date.available 2004-10-06T03:52:23Z
dc.date.issued 1994-01-22 en_US
dc.identifier.citation Los Angeles, CA en_US
dc.identifier.clearanceno 93-1195 en_US
dc.identifier.uri http://hdl.handle.net/2014/35512
dc.description.abstract High-T<SUB>c</SUB> SNS weak links are expected to prove useful as high frequency sources and detectors. Recent studies with low-T<SUB>c</SUB> Josephson mixers using shunted tunnel junctions at 100 GHz show good initial performance, and modeling suggests that these results should extrapolate to higher frequencies if larger I<SUB>c</SUB>R<SUB>n</SUB> products can be achieved. Progress on this work will be reported. en_US
dc.format.extent 90227 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other high frequency sources detectors Josephson silicon-on-sapphire substrates weak link en_US
dc.title (abstract) Epitaxial High-T<SUB>c</SUB> SNS Weak Links on Silicon-on-Sapphire Substrates en_US


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