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Noise and Electrical Characteristics below 10 K of small CHFET Circuits and Discrete Devices

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dc.contributor.author Cunningham, Thomas J. en_US
dc.contributor.author Gee, Russell en_US
dc.contributor.author Fossum, Eric R. en_US
dc.contributor.author Baier, Steven M. en_US
dc.date.accessioned 2004-10-06T02:44:46Z
dc.date.available 2004-10-06T02:44:46Z
dc.date.issued 1993-04-16 en_US
dc.identifier.citation Orlando, Florida, USA en_US
dc.identifier.clearanceno 93-0924 en_US
dc.identifier.uri http://hdl.handle.net/2014/35332
dc.description.abstract This paper discusses the lates results of a continuing study of the properties of the complementary heterojunction field-effect transistor (CHFET) at 4K. The electrical characteristics, including the gate leakage current and the subthreshold transconductance, and the input-referred noise voltage for a new lot of discrete CHFETs is presented and discussed. en_US
dc.format.extent 799647 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Complementary Heterojunction Field-effect Transistor (CHFET) en_US
dc.title Noise and Electrical Characteristics below 10 K of small CHFET Circuits and Discrete Devices en_US


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