Delta-Doped CCDs for Enhanced UV Performance

Nikzad, S.; Hoenk, M.; Grunthaner, P.; Terhune, R.; Grunthaner, F.

dc.contributor.author	Nikzad, S.	en_US
dc.contributor.author	Hoenk, M.	en_US
dc.contributor.author	Grunthaner, P.	en_US
dc.contributor.author	Terhune, R.	en_US
dc.contributor.author	Grunthaner, F.	en_US
dc.date.accessioned	2004-10-06
dc.date.available	2004-10-06
dc.date.issued	1994-07-26	en_US
dc.identifier.citation	San Diego, California, USA	en_US
dc.identifier.clearanceno	94-0986	en_US
dc.identifier.uri	http://hdl.handle.net/2014/34631
dc.description.abstract	Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.	en_US
dc.format.extent	381726 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	silicon quantum efficiency backside-illumination photoelectrons	en_US
dc.title	Delta-Doped CCDs for Enhanced UV Performance	en_US