dc.contributor.author |
Nikzad, S. |
en_US |
dc.contributor.author |
Hoenk, M. |
en_US |
dc.contributor.author |
Grunthaner, P. |
en_US |
dc.contributor.author |
Terhune, R. |
en_US |
dc.contributor.author |
Grunthaner, F. |
en_US |
dc.date.accessioned |
2004-10-06 |
|
dc.date.available |
2004-10-06 |
|
dc.date.issued |
1994-07-26 |
en_US |
dc.identifier.citation |
San Diego, California, USA |
en_US |
dc.identifier.clearanceno |
94-0986 |
en_US |
dc.identifier.uri |
http://hdl.handle.net/2014/34631 |
|
dc.description.abstract |
Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months. |
en_US |
dc.format.extent |
381726 bytes |
|
dc.format.mimetype |
application/pdf |
|
dc.language.iso |
en_US |
|
dc.subject.other |
silicon quantum efficiency backside-illumination photoelectrons |
en_US |
dc.title |
Delta-Doped CCDs for Enhanced UV Performance |
en_US |