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Delta-Doped CCDs for Enhanced UV Performance

Show simple item record Nikzad, S. en_US Hoenk, M. en_US Grunthaner, P. en_US Terhune, R. en_US Grunthaner, F. en_US 2004-10-06 2004-10-06 1994-07-26 en_US
dc.identifier.citation San Diego, California, USA en_US
dc.identifier.clearanceno 94-0986 en_US
dc.description.abstract Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months. en_US
dc.format.extent 381726 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other silicon quantum efficiency backside-illumination photoelectrons en_US
dc.title Delta-Doped CCDs for Enhanced UV Performance en_US

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