JPL Technical Report Server

Delta-Doped CCDs for Enhanced UV Performance

Show simple item record

dc.contributor.author Nikzad, S. en_US
dc.contributor.author Hoenk, M. en_US
dc.contributor.author Grunthaner, P. en_US
dc.contributor.author Terhune, R. en_US
dc.contributor.author Grunthaner, F. en_US
dc.date.accessioned 2004-10-06
dc.date.available 2004-10-06
dc.date.issued 1994-07-26 en_US
dc.identifier.citation San Diego, California, USA en_US
dc.identifier.clearanceno 94-0986 en_US
dc.identifier.uri http://hdl.handle.net/2014/34631
dc.description.abstract Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months. en_US
dc.format.extent 381726 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other silicon quantum efficiency backside-illumination photoelectrons en_US
dc.title Delta-Doped CCDs for Enhanced UV Performance en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search


Browse

My Account