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Ballistic-Electron-Emission Microscopy of Strained Si<sub>l-x</sub>Ge<sub>x</sub> Layers

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dc.contributor.author Milliken, A. M. en_US
dc.contributor.author Bell, L. D. en_US
dc.contributor.author Manion, S. J. en_US
dc.contributor.author Kaiser, W. J. en_US
dc.contributor.author Fathauer, R. W. en_US
dc.contributor.author Pike, W. T. en_US
dc.date.accessioned 2004-10-06
dc.date.available 2004-10-06
dc.date.issued 1994
dc.identifier.clearanceno 94-0806
dc.identifier.uri http://hdl.handle.net/2014/34457
dc.description.abstract Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si<sub>l-x</sub>Ge<sub>x</sub> alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. en_US
dc.format.extent 520427 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other lattice deformation en_US
dc.title Ballistic-Electron-Emission Microscopy of Strained Si<sub>l-x</sub>Ge<sub>x</sub> Layers en_US


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