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(abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

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dc.contributor.author Barner, J.B. en_US
dc.contributor.author Hunt, B.D. en_US
dc.contributor.author Foote, M.C. en_US
dc.date.accessioned 2004-10-05T06:11:37Z
dc.date.available 2004-10-05T06:11:37Z
dc.date.issued 1995-04 en_US
dc.identifier.citation San Francisco, CA en_US
dc.identifier.clearanceno 94-1445 en_US
dc.identifier.uri http://hdl.handle.net/2014/33472
dc.description.abstract We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions. en_US
dc.format.extent 22397 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other epitaxial doped PBCO YBCO junction fabrication milling mask overlayers resistively shunted junction edge proximity SNS devices en_US
dc.title (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers en_US


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