JPL Technical Report Server

Optical and Electrical Properties of Reactively Sputtered TiN, ZrN, and HfN Thin Films

Show simple item record

dc.contributor.author Edlou, Samad M. en_US
dc.contributor.author Simons, John C. en_US
dc.contributor.author Al-Jumaily, Ghanim A. en_US
dc.contributor.author Raouf, Nasrat A. en_US
dc.date.accessioned 2004-10-05T05:16:09Z
dc.date.available 2004-10-05T05:16:09Z
dc.date.issued 1994-07-24 en_US
dc.identifier.citation San Diego, CA en_US
dc.identifier.clearanceno 94-1076 en_US
dc.identifier.uri http://hdl.handle.net/2014/33142
dc.description.abstract Thin films of titanium, zirconium, and hafnium nitride are prepared by DC magnetron reactive sputtering at room temperature on fused silica, optical glass, and silicon substrates. Deposition parameters are investigated in order to obtain stoichiometric films. The optical and electrical properties of the films as a function of nitrogen partial pressure are determined. The results show that an inverse correlation exists between the optical reflectance and the electrical resistivity of the films. Ellipsometer data for all three films show that their refractive index in the visible spectrum is decreased by increasing the film thickness while the extinction coefficient is unchanged. Thin films of TiN have the lowest room temperature resistivity relative to ZrN and HfN thin films. en_US
dc.format.extent 613112 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Reactive sputtering optical coatings optical properties electrical properties thin films transition metal nitrides en_US
dc.title Optical and Electrical Properties of Reactively Sputtered TiN, ZrN, and HfN Thin Films en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search


Browse

My Account