Abstract:
The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N for growth on the basal plane. Demonstration of epitaxial growth for Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si<SUB>1-x</SUB>Ge<SUB>x</SUB> heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N/SiC multilayer structures have never been grown and the interfacial structure is unknown.
