Abstract:
Preparation of amorphous thin films in semiconductors and their transition to the crystalline phase may apply to switching devices. Surfaces of single crystal samples of bulk In2Se3 and thin films of InSe were treated using an excimer laser, and microscopic examination showed the treated portions of the surface had become amorphous. Film samples of InSe were laser-treated like the bulk samples. Examination of these treated flims showed shifts in the optical transmittance spectra as well as surface morphology changes.
