JPL CMOS Active Pixel Sensor Technology

Fossum, E.R.

dc.contributor.author	Fossum, E.R.	en_US
dc.date.accessioned	2004-10-03T04:17:44Z
dc.date.available	2004-10-03T04:17:44Z
dc.date.issued	1995-12	en_US
dc.identifier.citation	Georgetown, Grand Cayman Island, British West Indies	en_US
dc.identifier.clearanceno	95-1014	en_US
dc.identifier.uri	http://hdl.handle.net/2014/31156
dc.description.abstract	This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.	en_US
dc.format.extent	7380 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	Space Microelectronics Image Sensors APS Digital Imaging Camera	en_US
dc.title	JPL CMOS Active Pixel Sensor Technology	en_US