JPL Technical Report Server

JPL CMOS Active Pixel Sensor Technology

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dc.contributor.author Fossum, E.R. en_US
dc.date.accessioned 2004-10-03T04:17:44Z
dc.date.available 2004-10-03T04:17:44Z
dc.date.issued 1995-12 en_US
dc.identifier.citation Georgetown, Grand Cayman Island, British West Indies en_US
dc.identifier.clearanceno 95-1014 en_US
dc.identifier.uri http://hdl.handle.net/2014/31156
dc.description.abstract This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed. en_US
dc.format.extent 7380 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Space Microelectronics Image Sensors APS Digital Imaging Camera en_US
dc.title JPL CMOS Active Pixel Sensor Technology en_US


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