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Doping-Spike PtSi Schottky Infrared Detectors with Extended Cutoff

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dc.contributor.author Lin, T. L. en_US
dc.contributor.author Park, J. S. en_US
dc.contributor.author Gunapala, S. D. en_US
dc.contributor.author Jones, E. W. en_US
dc.contributor.author Castillo, H. M. Del en_US
dc.date.accessioned 2004-10-03T03:01:36Z
dc.date.available 2004-10-03T03:01:36Z
dc.date.issued 1995
dc.identifier.citation IEEE Transactions on Electron Devices en_US
dc.identifier.clearanceno 95-0807
dc.identifier.uri http://hdl.handle.net/2014/30674
dc.description.abstract A technique incorporating a p+ doping at the silicide/Si interface to reduce the en_US
dc.format.extent 314613 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other infrared detectors
dc.title Doping-Spike PtSi Schottky Infrared Detectors with Extended Cutoff en_US


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