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GaAs Infrared Detectors

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dc.contributor.author Gunapala, S. D. en_US
dc.contributor.author Bandara, S. V. en_US
dc.date.accessioned 2004-09-30T23:13:36Z
dc.date.available 2004-09-30T23:13:36Z
dc.date.issued 1996 en_US
dc.identifier.clearanceno 96-1288 en_US
dc.identifier.uri http://hdl.handle.net/2014/26423
dc.description.abstract It is customary to make infrared (IR) detectors in the long wavelength range (8-20 µm) by utilizing the interband transition which promotes an electron across the band gap (E<sub>g</sub>) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit. en_US
dc.format.extent 964007 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other infrared detectors infrared photodetector en_US
dc.title GaAs Infrared Detectors en_US


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