dc.contributor.author | Gunapala, S. D. | en_US |
dc.contributor.author | Bandara, S. V. | en_US |
dc.date.accessioned | 2004-09-30T23:13:36Z | |
dc.date.available | 2004-09-30T23:13:36Z | |
dc.date.issued | 1996 | en_US |
dc.identifier.clearanceno | 96-1288 | en_US |
dc.identifier.uri | http://hdl.handle.net/2014/26423 | |
dc.description.abstract | It is customary to make infrared (IR) detectors in the long wavelength range (8-20 µm) by utilizing the interband transition which promotes an electron across the band gap (E<sub>g</sub>) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit. | en_US |
dc.format.extent | 964007 bytes | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.subject.other | infrared detectors infrared photodetector | en_US |
dc.title | GaAs Infrared Detectors | en_US |