GaAs Infrared Detectors

Gunapala, S. D.; Bandara, S. V.

dc.contributor.author	Gunapala, S. D.	en_US
dc.contributor.author	Bandara, S. V.	en_US
dc.date.accessioned	2004-09-30T23:13:36Z
dc.date.available	2004-09-30T23:13:36Z
dc.date.issued	1996	en_US
dc.identifier.clearanceno	96-1288	en_US
dc.identifier.uri	http://hdl.handle.net/2014/26423
dc.description.abstract	It is customary to make infrared (IR) detectors in the long wavelength range (8-20 µm) by utilizing the interband transition which promotes an electron across the band gap (E<sub>g</sub>) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit.	en_US
dc.format.extent	964007 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	infrared detectors infrared photodetector	en_US
dc.title	GaAs Infrared Detectors	en_US