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Total Ionizing Dose Effects on 64Mb 3.3V DRAMs

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dc.contributor.author Johnston, A. H. en_US
dc.contributor.author Lee, C. I.
dc.date.accessioned 2004-09-26T01:06:37Z
dc.date.available 2004-09-26T01:06:37Z
dc.date.issued 1997-07-21 en_US
dc.identifier.citation Snowmass, Colorado en_US
dc.identifier.clearanceno 97-0894 en_US
dc.identifier.uri http://hdl.handle.net/2014/22407
dc.description.abstract 64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response en_US
dc.format.extent 373064 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Ionizing Dose Effects Samsung Mitsubishi en_US
dc.title Total Ionizing Dose Effects on 64Mb 3.3V DRAMs en_US


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