Total Ionizing Dose Effects on 64Mb 3.3V DRAMs

dc.contributor.author	Johnston, A. H.	en_US
dc.contributor.author	Lee, C. I.
dc.date.accessioned	2004-09-26T01:06:37Z
dc.date.available	2004-09-26T01:06:37Z
dc.date.issued	1997-07-21	en_US
dc.identifier.citation	Snowmass, Colorado	en_US
dc.identifier.clearanceno	97-0894	en_US
dc.identifier.uri	http://hdl.handle.net/2014/22407
dc.description.abstract	64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response	en_US
dc.format.extent	373064 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	Ionizing Dose Effects Samsung Mitsubishi	en_US
dc.title	Total Ionizing Dose Effects on 64Mb 3.3V DRAMs	en_US