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Total Ionizing Dose Effects in Flash Memories
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Total Ionizing Dose Effects in Flash Memories
Nguyen, D.
;
Lee, C.
;
Johnston, A.
URI:
http://hdl.handle.net/2014/20307
Date:
1998-07-20
Citation:
Nuclear and Plasma Science Society
Newport Beach, CA, U.S.A.
Abstract:
This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.
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JPL TRS 1992+
JPL TRS 1992+
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