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Total Ionizing Dose Effects in Flash Memories

Total Ionizing Dose Effects in Flash Memories

Nguyen, D.; Lee, C.; Johnston, A.
URI: http://hdl.handle.net/2014/20307
Date: 1998-07-20
Citation: Nuclear and Plasma Science Society
Newport Beach, CA, U.S.A.

Abstract:

This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.

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