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Ensemble Interactions in Strained Semiconductor Quantum Dot

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dc.contributor.author Leon, R. en_US
dc.contributor.author Marcinkevicius, S. en_US
dc.contributor.author Liao, X. en_US
dc.contributor.author Zou, J. en_US
dc.contributor.author Cockayne, D. en_US
dc.contributor.author Fafard, S. en_US
dc.date.accessioned 2004-09-24T17:26:17Z
dc.date.available 2004-09-24T17:26:17Z
dc.date.issued 1999 en_US
dc.identifier.citation Physical Review B en_US
dc.identifier.citation USA en_US
dc.identifier.clearanceno 99-1838 en_US
dc.identifier.uri http://hdl.handle.net/2014/18361
dc.description.abstract Large variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities. en_US
dc.format.extent 826010 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other quantum dots optical properties photoluminescence en_US
dc.title Ensemble Interactions in Strained Semiconductor Quantum Dot en_US


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