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640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera
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| dc.contributor.author | Gunapala, S. | en_US |
| dc.contributor.author | Bandara, S. | en_US |
| dc.contributor.author | Liu, J. | en_US |
| dc.contributor.author | Rafol, S. | en_US |
| dc.contributor.author | Luong, E. | en_US |
| dc.contributor.author | Mumolo, J. | en_US |
| dc.contributor.author | Tran, N. | en_US |
| dc.date.accessioned | 2004-09-24T16:31:44Z | |
| dc.date.available | 2004-09-24T16:31:44Z | |
| dc.date.issued | 1999-09-05 | en_US |
| dc.identifier.citation | Third International Conference: Mid-infrared Optoelectronics | en_US |
| dc.identifier.citation | Aachen, Germany | en_US |
| dc.identifier.clearanceno | 99-1318 | en_US |
| dc.identifier.uri | http://hdl.handle.net/2014/17868 | |
| dc.description.abstract | An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). | en_US |
| dc.format.extent | 1170985 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | |
| dc.subject.other | multi-quantum-wells intersubband transitions long-wavelength infrared two-color Focal Plane Arrays | en_US |
| dc.title | 640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera | en_US |
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JPL TRS 1992+
JPL TRS 1992+