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640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

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dc.contributor.author Gunapala, S. en_US
dc.contributor.author Bandara, S. en_US
dc.contributor.author Liu, J. en_US
dc.contributor.author Rafol, S. en_US
dc.contributor.author Luong, E. en_US
dc.contributor.author Mumolo, J. en_US
dc.contributor.author Tran, N. en_US
dc.date.accessioned 2004-09-24T16:31:44Z
dc.date.available 2004-09-24T16:31:44Z
dc.date.issued 1999-09-05 en_US
dc.identifier.citation Third International Conference: Mid-infrared Optoelectronics en_US
dc.identifier.citation Aachen, Germany en_US
dc.identifier.clearanceno 99-1318 en_US
dc.identifier.uri http://hdl.handle.net/2014/17868
dc.description.abstract An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). en_US
dc.format.extent 1170985 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other multi-quantum-wells intersubband transitions long-wavelength infrared two-color Focal Plane Arrays en_US
dc.title 640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera en_US


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