Latent damage in CMOS devices from single-event latchup

Becker, H.; Miyahira,   T. F.; Johnston,    A. H.

dc.contributor.author	Becker, H.	en_US
dc.contributor.author	Miyahira, T. F.	en_US
dc.contributor.author	Johnston, A. H.	en_US
dc.date.accessioned	2004-09-17T06:45:42Z
dc.date.available	2004-09-17T06:45:42Z
dc.date.issued	2002-07-16	en_US
dc.identifier.citation	IEEE Transactions on Nuclear Science	en_US
dc.identifier.citation	Phoenix, AZ, USA	en_US
dc.identifier.clearanceno	02-1615	en_US
dc.identifier.uri	http://hdl.handle.net/2014/9401
dc.description.abstract	Latent damage effects from single-event latchup are studied, revealing a previously unconsidered reliability hazard for CMOS devices. Several device types were found to remain functional despite significant structural damage to their interconnects from SEL.	en_US
dc.format.extent	3095751 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	single-event latchup CMOS latent metallizaion damage	en_US
dc.title	Latent damage in CMOS devices from single-event latchup	en_US