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Latent damage in CMOS devices from single-event latchup

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dc.contributor.author Becker, H. en_US
dc.contributor.author Miyahira, T. F. en_US
dc.contributor.author Johnston, A. H. en_US
dc.date.accessioned 2004-09-17T06:45:42Z
dc.date.available 2004-09-17T06:45:42Z
dc.date.issued 2002-07-16 en_US
dc.identifier.citation IEEE Transactions on Nuclear Science en_US
dc.identifier.citation Phoenix, AZ, USA en_US
dc.identifier.clearanceno 02-1615 en_US
dc.identifier.uri http://hdl.handle.net/2014/9401
dc.description.abstract Latent damage effects from single-event latchup are studied, revealing a previously unconsidered reliability hazard for CMOS devices. Several device types were found to remain functional despite significant structural damage to their interconnects from SEL. en_US
dc.format.extent 3095751 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other single-event latchup CMOS latent metallizaion damage en_US
dc.title Latent damage in CMOS devices from single-event latchup en_US


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