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Modification of high purity N-type silicon surfaces by antimony delta doping for detector applications

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dc.contributor.author Bandaru, J. en_US
dc.contributor.author Cunningham, T. en_US
dc.contributor.author Hoenk, M. E. en_US
dc.contributor.author Jones, T. J. en_US
dc.contributor.author Nikzad, S. en_US
dc.date.accessioned 2004-09-17
dc.date.available 2004-09-17
dc.date.issued 2003-12-01 en_US
dc.identifier.citation Materials Research Society, Fall Meeting en_US
dc.identifier.citation Boston, MA, USA en_US
dc.identifier.clearanceno 03-3201 en_US
dc.identifier.uri http://hdl.handle.net/2014/8007
dc.format.extent 2048594 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other silicon n-type silicon detectors charge coupled devices en_US
dc.title Modification of high purity N-type silicon surfaces by antimony delta doping for detector applications en_US


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