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Room temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 mu m based on (001) InP substrate

Room temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 mu m based on (001) InP substrate

Qui, Y.; Uhl, D.; Keo, S.
URI: http://hdl.handle.net/2014/7958
Date: 2004-01
Citation: Applied physics letters, vol. 84, no. 2, pp. 263-265

Abstract:

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy.

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