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Room temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 mu m based on (001) InP substrate
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Room temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 mu m based on (001) InP substrate
Qui, Y.
;
Uhl, D.
;
Keo, S.
URI:
http://hdl.handle.net/2014/7958
Date:
2004-01
Citation:
Applied physics letters, vol. 84, no. 2, pp. 263-265
Abstract:
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy.
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JPL TRS 1992+
JPL TRS 1992+
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