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The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

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dc.contributor.author Becker, H. N. en_US
dc.contributor.author Miyahira, T. F. en_US
dc.contributor.author Johnston, A. H. en_US
dc.date.accessioned 2004-09-16T23:51:09Z
dc.date.available 2004-09-16T23:51:09Z
dc.date.issued 2003-07-21 en_US
dc.identifier.citation 2003 IEEE Nuclear and Space Radiation Effects Conference en_US
dc.identifier.citation Monterey, CA, USA en_US
dc.identifier.clearanceno 03-2146 en_US
dc.identifier.uri http://hdl.handle.net/2014/7831
dc.description.abstract A discussion of structural parameters that may heighten radiation sensitivity is presented, including doping levels and p-n junction termination techniques. en_US
dc.format.extent 3716043 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other avalanche photodiode dark current protons en_US
dc.title The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation en_US


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