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InAs/GaSb/AlSb resonant tunneling spin device concepts

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dc.contributor.author Ting, D. Z. Y. en_US
dc.contributor.author Cartoixa, X. en_US
dc.date.accessioned 2004-09-16T23:16:39Z
dc.date.available 2004-09-16T23:16:39Z
dc.date.issued 2003-06-16 en_US
dc.identifier.citation 11th International Conference on Narrow Gap Semiconductors en_US
dc.identifier.citation Buffalo, NY, USA en_US
dc.identifier.clearanceno 03-1573 en_US
dc.identifier.uri http://hdl.handle.net/2014/7591
dc.description.abstract We discuss device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic 6.1 A semiconductor resonant tunneling structures. en_US
dc.format.extent 2948351 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other spin filter spin pump resonant tunneling bulk inversion asymmetry structural inversion asymmetry Rashba effect spin transport en_US
dc.title InAs/GaSb/AlSb resonant tunneling spin device concepts en_US


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