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Transferred substrate heterojunction bipolar transistors for submillimeter wave applications

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dc.contributor.author Fung, A. en_US
dc.contributor.author Samoska, L. en_US
dc.contributor.author Siegel, P. en_US
dc.contributor.author Rodwell, M. en_US
dc.contributor.author Urteaga, M. en_US
dc.contributor.author Paidi, V. en_US
dc.date.accessioned 2004-09-16T23:11:53Z
dc.date.available 2004-09-16T23:11:53Z
dc.date.issued 2003-04-22 en_US
dc.identifier.citation 14th International Symposium on Space TeraHertz Technology en_US
dc.identifier.citation Tuscon, AZ, USA en_US
dc.identifier.clearanceno 03-1391 en_US
dc.identifier.uri http://hdl.handle.net/2014/7492
dc.description.abstract We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits. en_US
dc.format.extent 3195125 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other heterojunction bipolar transistor InP submillimeter en_US
dc.title Transferred substrate heterojunction bipolar transistors for submillimeter wave applications en_US


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