Comparison of the effects of 51-MeV protons on differing silicon avalance photodiode structures

dc.contributor.author	Becker, H. N.	en_US
dc.contributor.author	Miyahira, T. F.	en_US
dc.contributor.author	Johnston, A. H.	en_US
dc.date.accessioned	2004-09-16T21:58:18Z
dc.date.available	2004-09-16T21:58:18Z
dc.date.issued	2003-07-21	en_US
dc.identifier.citation	2003 IEEE Nuclear and Space Radiation Effects Conference	en_US
dc.identifier.citation	Monterey, CA, USA	en_US
dc.identifier.clearanceno	03-0520	en_US
dc.identifier.uri	http://hdl.handle.net/2014/6983
dc.format.extent	3010522 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	avalanche photodiode dark current protons responsivity	en_US
dc.title	Comparison of the effects of 51-MeV protons on differing silicon avalance photodiode structures	en_US