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Comparison of the effects of 51-MeV protons on differing silicon avalance photodiode structures

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dc.contributor.author Becker, H. N. en_US
dc.contributor.author Miyahira, T. F. en_US
dc.contributor.author Johnston, A. H. en_US
dc.date.accessioned 2004-09-16T21:58:18Z
dc.date.available 2004-09-16T21:58:18Z
dc.date.issued 2003-07-21 en_US
dc.identifier.citation 2003 IEEE Nuclear and Space Radiation Effects Conference en_US
dc.identifier.citation Monterey, CA, USA en_US
dc.identifier.clearanceno 03-0520 en_US
dc.identifier.uri http://hdl.handle.net/2014/6983
dc.format.extent 3010522 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other avalanche photodiode dark current protons responsivity en_US
dc.title Comparison of the effects of 51-MeV protons on differing silicon avalance photodiode structures en_US


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