Son, K.-A.; Liu, Y.; Ruden, P. P.; Xie, J.; Biyikli, N.; Moon, Y.-T.; Onojima, N.; Morkoc, H.
(Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005., 2005-10)
The linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications.