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Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory

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dc.contributor.author Irom, Farokh
dc.contributor.author Allen, Gregory R.
dc.date.accessioned 2021-11-01T18:34:48Z
dc.date.available 2021-11-01T18:34:48Z
dc.date.issued 2020-09-14
dc.identifier.citation RADECS 2020 Radiation Effects on Components and Systems Conference, Vannes, France, September 14-18, 2020
dc.identifier.clearanceno CL#20-1909
dc.identifier.uri http://hdl.handle.net/2014/52323
dc.description.abstract Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US
dc.publisher Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2020
dc.title Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory
dc.type Preprint


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