Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory

Irom, Farokh; Allen, Gregory R.

dc.contributor.author	Irom, Farokh
dc.contributor.author	Allen, Gregory R.
dc.date.accessioned	2021-11-01T18:34:48Z
dc.date.available	2021-11-01T18:34:48Z
dc.date.issued	2020-09-14
dc.identifier.citation	RADECS 2020 Radiation Effects on Components and Systems Conference, Vannes, France, September 14-18, 2020
dc.identifier.clearanceno	CL#20-1909
dc.identifier.uri	http://hdl.handle.net/2014/52323
dc.description.abstract	Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).
dc.description.sponsorship	NASA/JPL	en_US
dc.language.iso	en_US
dc.publisher	Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2020
dc.title	Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory
dc.type	Preprint