Micromechanical Broadband Infrared Sensors based on Piezoelectric Bending Resonators

Abstract

There is a high demand for high-performance and low-cost uncooled infrared (IR) detectors. In order to meet this need we are investigating the use of MEMS piezoelectric resonator technology using aluminum nitride (AlN) thin films. Recent research has shown that piezoelectric resonators have the potential to be used as a core element for highly sensitive, low-noise, and low-power uncooled IR detectors. A novel design of an AlN IR sensor based on piezoelectric bending resonator is described and analyzed in this paper. The detector is constructed by using thermally mismatched materials which stress the resonator and shift the resonance frequency. The IR thermal input is sensed by monitoring the frequency shift induced by the in-plan thermal stress. These designs have the potential for very high sensitivity and are compatible with commercially viable CMOS fabrication technology.