Publisher:Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2018
Citation:GOMACTech 2018, Miami, Florida, March 12-15, 2018
Abstract:
MRAM and DRAM memory technologies identified for possible radiation hardening were investigated for memory-array- and controller-level radiation sensitivity. TID and SEE performance of memory arrays and associated cells is good, but with some questions about viability of hardening of problematic control circuitry. Control-circuitry-related SEE problems are highlighted. TID data are focused on memory arrays only.