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Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector

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dc.contributor.author Pepper, Brian J.
dc.contributor.author Soibel, Alexander
dc.contributor.author Ting, David Z.
dc.contributor.author Hill, Cory J.
dc.contributor.author Khoshakhlagh, Arezou
dc.contributor.author Fisher, Anita M.
dc.contributor.author Keo, Sam A.
dc.contributor.author Gunapala, Sarath
dc.date.accessioned 2019-07-02T18:20:30Z
dc.date.available 2019-07-02T18:20:30Z
dc.date.issued 2017-04-09
dc.identifier.citation SPIE Defense + Commercial Sensing, Anaheim, California, April 9-13, 2017 en_US
dc.identifier.clearanceno CL#17-1617
dc.identifier.uri http://hdl.handle.net/2014/46387
dc.description.abstract Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2017 en_US
dc.title Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector en_US
dc.type Preprint en_US


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