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Fitting a model to floating gate prompt charge loss test data for the Samsung 8 Gb SLC NAND flash memory

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dc.contributor.author Edmonds, L. D.
dc.contributor.author Irom, F.
dc.contributor.author Allen, G.R.
dc.date.accessioned 2019-06-11T21:58:45Z
dc.date.available 2019-06-11T21:58:45Z
dc.date.issued 2016-09-19
dc.identifier.citation Conference on Radiation and its Effects on Components and Systems (RADECS 2016), Bremen, Germany, September 19-23, 2016 en_US
dc.identifier.clearanceno 16-4300
dc.identifier.uri http://hdl.handle.net/2014/46238
dc.description.abstract A recent model provides risk estimates for the deprogramming, of initially programmed floating gates, via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2016 en_US
dc.title Fitting a model to floating gate prompt charge loss test data for the Samsung 8 Gb SLC NAND flash memory en_US
dc.type Preprint en_US


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