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Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories

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dc.contributor.author Amrbar, Mehran
dc.contributor.author Guertin, Steven M.
dc.date.accessioned 2019-05-29T16:56:28Z
dc.date.available 2019-05-29T16:56:28Z
dc.date.issued 2016-07-11
dc.identifier.citation 2016 Nuclear And Space Radiation Effects Conference, Portland, Oregon, July 11-15, 2016 en_US
dc.identifier.clearanceno 16-3676
dc.identifier.uri http://hdl.handle.net/2014/46180
dc.description.abstract Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2016 en_US
dc.title Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories en_US
dc.type Preprint en_US


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