Publisher:Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2014
Citation:SPIE Photonics West 2014, San Francisco, California, February 1-6, 2014
Abstract:
In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.