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Single-event effect report for EPC Series eGaN FETs: proton testing for SEE and TNID effects

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dc.contributor.author Scheick, Leif
dc.date.accessioned 2014-08-19T22:25:06Z
dc.date.available 2014-08-19T22:25:06Z
dc.date.issued 2014-01-01
dc.identifier.uri http://hdl.handle.net/2014/44646
dc.description.abstract Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2014 en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 14-05 en_US
dc.subject proton irradiation en_US
dc.subject UC-Davis en_US
dc.subject University of Califorina-Davis en_US
dc.subject SEE en_US
dc.subject Enhanced Power Conversion en_US
dc.subject EPC en_US
dc.subject Single-event effect en_US
dc.subject Single Event Gate Rupture en_US
dc.subject SEGR en_US
dc.subject Efficient Power Conversion Corporation en_US
dc.subject eGaN en_US
dc.subject FET en_US
dc.subject total non-ionizing dose en_US
dc.subject TNID en_US
dc.title Single-event effect report for EPC Series eGaN FETs: proton testing for SEE and TNID effects en_US
dc.type Technical Report en_US
dc.subject.NASATaxonomy Electronics and Electrical Engineering en_US


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