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Evaluation of magnetoresistive RAM for space applications

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dc.contributor.author Heidecker, Jason
dc.date.accessioned 2014-08-19T22:24:35Z
dc.date.available 2014-08-19T22:24:35Z
dc.date.issued 2014-01-01
dc.identifier.uri http://hdl.handle.net/2014/44645
dc.description.abstract Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2014 en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 14-01 en_US
dc.subject Magnetoresistive Random Access Memory en_US
dc.subject MRAM en_US
dc.title Evaluation of magnetoresistive RAM for space applications en_US
dc.type Technical Report en_US
dc.subject.NASATaxonomy Quality Assurance and Reliability en_US


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