dc.contributor.author |
Heidecker, Jason |
|
dc.date.accessioned |
2014-08-19T22:24:35Z |
|
dc.date.available |
2014-08-19T22:24:35Z |
|
dc.date.issued |
2014-01-01 |
|
dc.identifier.uri |
http://hdl.handle.net/2014/44645 |
|
dc.description.abstract |
Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell. |
en_US |
dc.description.sponsorship |
NASA/JPL |
en_US |
dc.language.iso |
en_US |
en_US |
dc.publisher |
Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2014 |
en_US |
dc.relation.ispartofseries |
JPL Publication |
en_US |
dc.relation.ispartofseries |
14-01 |
en_US |
dc.subject |
Magnetoresistive Random Access Memory |
en_US |
dc.subject |
MRAM |
en_US |
dc.title |
Evaluation of magnetoresistive RAM for space applications |
en_US |
dc.type |
Technical Report |
en_US |
dc.subject.NASATaxonomy |
Quality Assurance and Reliability |
en_US |